English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MoBL® |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 16Mb (2M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 55ns |
| 访问时间: | 55 ns |
| 电压 - 电源: | 2.2V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 48-VFBGA |
| 供应商设备包: | 48-VFBGA (8x9.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT46V32M16BN-6 IT:FMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
AT27LV010A-90TCRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 32TSOP |
|
CY7C1515SV18-167BZCCypress Semiconductor |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
S25FL116K0XBHI020Cypress Semiconductor |
IC FLASH 16MBIT SPI/QUAD 24BGA |
|
AT29C1024-70TCRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 48TSOP |
|
70V37L15PF8Renesas Electronics America |
IC SRAM 576KBIT PARALLEL 100TQFP |
|
MT25QL128ABA1ESE-MSITMicron Technology |
IC FLSH 128MBIT SPI 133MHZ 8SOP2 |
|
MT48LC16M16A2TG-6A:GTRAlliance Memory, Inc. |
IC DRAM 256MBIT PAR 54TSOP II |
|
MR256A08BCSO35REverspin Technologies, Inc. |
IC RAM 256KBIT PARALLEL 32SOIC |
|
AT25256AW-10SU-2.7Roving Networks / Microchip Technology |
IC EEPROM 256KBIT SPI 8SOIC |
|
24AA32A/SNRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 8SOIC |
|
MT47H128M8B7-37E L:AMicron Technology |
IC DRAM 1GBIT PARALLEL 92FBGA |
|
CAT28C64BG-12TSanyo Semiconductor/ON Semiconductor |
IC EEPROM 64KBIT PARALLEL 32PLCC |
