类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3L |
内存大小: | 2Gb (128M x 16) |
内存接口: | Parallel |
时钟频率: | 800 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 20 ns |
电压 - 电源: | 1.283V ~ 1.45V |
工作温度: | -40°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 96-TFBGA |
供应商设备包: | 96-TWBGA (9x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT45DB041B-CNURoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 20MHZ 8CASON |
|
IS66WVE2M16DBLL-70BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 32MBIT PARALLEL 48TFBGA |
|
7025L30J8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 84PLCC |
|
W948D6FBHX5IWinbond Electronics Corporation |
IC DRAM 256MBIT PARALLEL 60VFBGA |
|
AT25DQ161-SH-BRoving Networks / Microchip Technology |
IC FLASH 16MBIT SPI 100MHZ 8SOIC |
|
N25Q128A13ESEDFF TRMicron Technology |
IC FLASH 128MBIT SPI 108MHZ 8SO |
|
MT29C1G12MAAIAFAMD-6 ITMicron Technology |
IC FLASH RAM 1GBIT PAR 130VFBGA |
|
MT46H8M32LFB5-5:HMicron Technology |
IC DRAM 256MBIT PARALLEL 90VFBGA |
|
S34ML04G104BHI013SkyHigh Memory Limited |
IC FLASH 4G PARALLEL 63BGA |
|
7025S15JRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 84PLCC |
|
7133LA25PFRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 100TQFP |
|
DS1245Y-70Maxim Integrated |
IC NVSRAM 1MBIT PARALLEL 32EDIP |
|
IDT71V65602S150PF8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |