English
简体中文
COMP O= .390,L= .97,W= .041
IC SRAM 128KBIT PARALLEL 100TQFP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Asynchronous |
| 内存大小: | 128Kb (8K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 25ns |
| 访问时间: | 25 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IDT71V256SA10YI8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
MT48LC32M16A2TG-75:IT:CTRAlliance Memory, Inc. |
IC DRAM 512MBIT PAR 54TSOP II |
|
MT29F32G08CBACAWP-IT:CMicron Technology |
IC FLSH 32GBIT PARALLEL 48TSOP I |
|
S29GL064S90FHA023Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
W632GG8MB-12Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78VFBGA |
|
M25PX80-VMN6TPBA TRMicron Technology |
IC FLASH 8MBIT SPI 75MHZ 8SO |
|
S29GL064N90BAI030Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 48FBGA |
|
IS42SM32160E-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90TFBGA |
|
IS46TR16640B-125JBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
CY7C1371D-133AXCCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
IDT71T75602S100PFIRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
IDT71V2558S166PF8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
S25FL129P0XNFI000MCypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 8WSON |