English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH |
| 内存大小: | 2Mb (256K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 50µs |
| 访问时间: | 90 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 32-LCC (J-Lead) |
| 供应商设备包: | 32-PLCC (13.97x11.43) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT46V32M8TG-75Z:G TRMicron Technology |
IC DRAM 256MBIT PARALLEL 66TSOP |
|
IDT71V3556S133BGIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
IDT71V67803S133PF8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
AT25040AN-10SU-1.8Roving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 20MHZ 8SOIC |
|
IDT71124S12YI8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
IS41LV16100D-50KLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PARALLEL 42SOJ |
|
IDT71V416YS15YIRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
W25Q16CLZPIG TRWinbond Electronics Corporation |
IC FLASH 16MBIT SPI/QUAD 8WSON |
|
DS1230Y-150Maxim Integrated |
IC NVSRAM 256KBIT PAR 28EDIP |
|
MX29F400CTMI-70GMacronix |
IC FLASH 4MBIT PARALLEL 44SOP |
|
FM93C46LNSanyo Semiconductor/ON Semiconductor |
IC EEPROM 1KBIT SPI 250KHZ 8DIP |
|
AS4C512M8D3A-12BANAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
AT27C256R-45JIRoving Networks / Microchip Technology |
IC EPROM 256KBIT PARALLEL 32PLCC |
