English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | SST39 MPF™ |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH |
| 内存大小: | 4Mb (512K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 20µs |
| 访问时间: | 45 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 32-LCC (J-Lead) |
| 供应商设备包: | 32-PLCC (11.43x13.97) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS25LQ512A-JNLEISSI (Integrated Silicon Solution, Inc.) |
IC FLSH 512KBIT SPI/QUAD 8SOIC |
|
M27W101-80N6TRSTMicroelectronics |
IC EPROM 1MBIT PARALLEL 32TSOP |
|
AT27BV010-90VCRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 32VSOP |
|
7026L55J8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 84PLCC |
|
IS61QDB22M36A-250M3IISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 72MBIT PARALLEL 165LFBGA |
|
AS4C128M16D3-12BANTRAlliance Memory, Inc. |
IC DRAM 2GBIT PARALLEL 96FBGA |
|
70V658S10DRRenesas Electronics America |
IC SRAM 2MBIT PARALLEL 208PQFP |
|
IS43DR16128A-3DBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 84LFBGA |
|
W632GU6NB12JWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96VFBGA |
|
IDT71V67903S75PFRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
AT49F040A-55JU-TRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32PLCC |
|
IS61DDB22M18A-250M3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |
|
AS4C256M16D3B-12BCNTRAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 96FBGA |
