类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3L |
内存大小: | 2Gb (128M x 16) |
内存接口: | Parallel |
时钟频率: | 800 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 20 ns |
电压 - 电源: | 1.283V ~ 1.45V |
工作温度: | -40°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 96-VFBGA |
供应商设备包: | 96-FBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT48LC2M32B2P-6A:J TRMicron Technology |
IC DRAM 64MBIT PAR 86TSOP II |
|
W25Q64CVSSJP TRWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 8SOIC |
|
MT29F2G16ABAEAWP-IT:EMicron Technology |
IC FLASH 2GBIT PARALLEL 48TSOP I |
|
CY7C1315BV18-200BZCCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
W97BH6KBVX2EWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 134VFBGA |
|
IS45S16400F-7TLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 54TSOP II |
|
93C76BT-E/MSRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ 8MSOP |
|
DS1330ABP-70Maxim Integrated |
IC NVSRAM 256KBIT PAR 34PWRCAP |
|
IDT71V3558S133PFRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
7132LA55J8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
S29GL256P11FFIS53Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
MT48LC16M16A2TG-6A IT:GTRAlliance Memory, Inc. |
IC DRAM 256MBIT PAR 54TSOP II |
|
70V27S55PF8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |