English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR |
| 内存大小: | 1Gb (128M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | 167 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 700 ps |
| 电压 - 电源: | 2.3V ~ 2.7V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 66-TSSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 66-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY7C025AV-20AXICypress Semiconductor |
IC SRAM 128KBIT PARALLEL 100TQFP |
|
CY7C025-25JXCTCypress Semiconductor |
IC SRAM 128KBIT PARALLEL 84PLCC |
|
MT28F128J3BS-12 ET TRMicron Technology |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
AT24C04AN-10SI-2.5Roving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 400KHZ 8SOIC |
|
MT53D384M32D2DS-046 AIT:C TRMicron Technology |
IC DRAM 12GBIT 2133MHZ 200WFBGA |
|
IS43R16800C-5TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 66TSOP II |
|
PC28F128J3D75B TRMicron Technology |
IC FLASH 128MBIT PAR 64EASYBGA |
|
AT28BV64B-20JARoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 32PLCC |
|
M34C02-WMN6TSTMicroelectronics |
IC EEPROM 2KBIT I2C 400KHZ 8SO |
|
AT49BV320-90TIRoving Networks / Microchip Technology |
IC FLASH 32MBIT PARALLEL 48TSOP |
|
NAND512W3A2CZA6EMicron Technology |
IC FLSH 512MBIT PARALLEL 63VFBGA |
|
AT29C010A-70JCRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
IDT71V65602S133PFIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
