类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, QDR |
内存大小: | 18Mb (512K x 36) |
内存接口: | Parallel |
时钟频率: | 167 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.4V ~ 2.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-LBGA |
供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IDT71V35761YSA200BQRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
IDT71V65802S100PFGRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
AT25320A-10PU-2.7Roving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 20MHZ 8DIP |
|
BR93L56-WROHM Semiconductor |
IC EEPROM 2KBIT SPI 2MHZ 8DIP |
|
IS49NLC96400-33BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 144FCBGA |
|
GD5F4GQ4RBYIGYGigaDevice |
IC FLASH 4GBIT SPI/QUAD 8WSON |
|
AT49BV160T-70TIRoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
CY7C1363B-100ACCypress Semiconductor |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
IDT71V3556S133BQIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
CY14B256K-SP35XITCypress Semiconductor |
IC NVSRAM 256KBIT PAR 48SSOP |
|
MT41K256M16TW-107 V:PMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
AS4C128M8D3L-12BINTRAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 78FBGA |
|
IDT71V35761S200BQ8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |