类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 1Mb (128K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 45ns |
访问时间: | 45 ns |
电压 - 电源: | 2.2V ~ 3.6V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 32-TFSOP (0.465", 11.80mm Width) |
供应商设备包: | 32-sTSOP I |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
AT27LV020A-15VCRoving Networks / Microchip Technology |
IC EPROM 2MBIT PARALLEL 32VSOP |
![]() |
S34ML04G100TFB003SkyHigh Memory Limited |
IC FLASH 4G PARALLEL 48TSOP I |
![]() |
IDT71016S20PH8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 44TSOP II |
![]() |
MT48V4M32LFF5-8 IT:G TRMicron Technology |
IC DRAM 128MBIT PARALLEL 90VFBGA |
![]() |
CY7C024-55JXCTCypress Semiconductor |
IC SRAM 64KBIT PARALLEL 84PLCC |
![]() |
MT46V128M4P-75:DMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
![]() |
7006L20JRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 68PLCC |
![]() |
IS25LQ512B-JKLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 512KBIT SPI/QUAD 8WSON |
![]() |
AT28C64E-25PCRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28DIP |
![]() |
MT48LC2M32B2P-7 IT:GMicron Technology |
IC DRAM 64MBIT PAR 86TSOP II |
![]() |
MT47H64M16HR-3 AAT:H TRMicron Technology |
IC DRAM 1GBIT PARALLEL 84FBGA |
![]() |
AT21CS01-SSHM14-TRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 125KHZ 8SOIC |
![]() |
S70GL02GP12FFI020Cypress Semiconductor |
IC FLASH 2GBIT PARALLEL 64FBGA |