类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100 |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH |
内存大小: | 4Mb (512K x 8) |
内存接口: | SPI |
时钟频率: | 30 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IDT71V3558S166PFI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
IS46TR16640B-15GBLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
CY7C1319KV18-250BZCCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
AT28HC256F-90TARoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28TSOP |
|
M25P64-VMF3PBMicron Technology |
IC FLASH 64MBIT SPI 75MHZ 16SO W |
|
IDT71V3558XS133PFGIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
IS61NLF51236-6.5B3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
IS42SM32160C-75BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90WBGA |
|
IDT71V2559S85PFG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
N25Q128A13ESEC0GMicron Technology |
IC FLSH 128MBIT SPI 108MHZ 8SOP2 |
|
W25Q128JVAIQWinbond Electronics Corporation |
IC FLASH 128MBIT SPI/QUAD 8DIP |
|
AT29C040A-15PCRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32DIP |
|
AT24C08-10PC-2.7Roving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 400KHZ 8DIP |