English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q100 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 2Kb (256 x 8) |
| 内存接口: | SPI |
| 时钟频率: | 10 MHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | - |
| 电压 - 电源: | 2.5V ~ 5.5V |
| 工作温度: | -40°C ~ 150°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT28BV16-25SIRoving Networks / Microchip Technology |
IC EEPROM 16KBIT PARALLEL 24SOIC |
|
AT27C516-85JCRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 44PLCC |
|
IS42S32160B-6TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 86TSOP II |
|
IS42S32160B-75TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 86TSOP II |
|
S34ML04G200BHI000SkyHigh Memory Limited |
IC FLASH 4G PARALLEL 63BGA |
|
IDT71V416S15YI8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
IS61QDB21M36C-250M3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |
|
S34ML02G200TFI503SkyHigh Memory Limited |
IC FLASH 2G PARALLEL 48TSOP I |
|
24LC024H-E/SN16KVAORoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8SOIC |
|
IDT71V424L10Y8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
S70GL02GP11FAIR23Cypress Semiconductor |
IC FLASH 2GBIT PARALLEL 64FBGA |
|
AT34C02-10PI-1.8Roving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8DIP |
|
IS42S16400D-6TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 54TSOP II |
