English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 256b (32 x 8) |
| 内存接口: | 1-Wire® |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | 15 µs |
| 电压 - 电源: | - |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 6-LSOJ (0.148", 3.76mm Width) |
| 供应商设备包: | 6-TSOC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S29GL256P10FFIS20Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
MT53B128M32D1DS-062 AIT:A TRMicron Technology |
IC DRAM 4GBIT 1600MHZ 200WFBGA |
|
AT49BV002NT-12TIRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32TSOP |
|
AT29LV020-12TI-TRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32TSOP |
|
S34ML04G200TFI003SkyHigh Memory Limited |
IC FLASH 4G PARALLEL 48TSOP I |
|
W948D6FBHX5E TRWinbond Electronics Corporation |
IC DRAM 256MBIT PARALLEL 60VFBGA |
|
IS25WQ040-JKLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 4MBIT SPI 104MHZ 8WSON |
|
N25Q128A13BSF40GMicron Technology |
IC FLASH 128MBIT SPI 108MHZ 16SO |
|
25LC080CT-H/SNVAORoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8SOIC |
|
SST39WF1601-70-4C-Y1QERoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48WFBGA |
|
M25P32-VMF6PBAMicron Technology |
IC FLASH 32MBIT SPI 75MHZ 16SO W |
|
AT49F001NT-55TIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32TSOP |
|
IS61NLP51236-200B3LI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
