English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | NoBL™ |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 72Mb (4M x 18) |
| 内存接口: | Parallel |
| 时钟频率: | 200 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 3 ns |
| 电压 - 电源: | 3.135V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS43LD32320A-25BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 134TFBGA |
|
AT25DF041A-SSH-TAdesto Technologies |
IC FLASH 4MBIT SPI 70MHZ 8SOIC |
|
AT25640-10PC-1.8Roving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 3MHZ 8DIP |
|
W9864G6IH-6Winbond Electronics Corporation |
IC DRAM 64MBIT PAR 54TSOP II |
|
IDT71V67602S150BQRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
70V06L20PFI8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 64TQFP |
|
IS61NLF102418-6.5B3I-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
MT29F64G08CBAAAWP-IT:AMicron Technology |
IC FLSH 64GBIT PARALLEL 48TSOP I |
|
MT47H256M4CF-3:HMicron Technology |
IC DRAM 1GBIT PARALLEL 60FBGA |
|
AT49BV002AN-70VIRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32VSOP |
|
IDT71V2559S75PFRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
MT28F320J3FS-11 GMET TRMicron Technology |
IC FLASH 32MBIT PARALLEL 64FBGA |
|
AT28HC256-90PURoving Networks / Microchip Technology |
IC EEPROM 256KBIT PARALLEL 28DIP |
