English
简体中文
COB LED HLDR ASSY - 13.5X13.5
IC DRAM 128MBIT PARALLEL 66TSOP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR |
| 内存大小: | 128Mb (8M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 167 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 700 ps |
| 电压 - 电源: | 2.3V ~ 2.7V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 66-TSSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 66-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
W25Q64JVSTIQ TRWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 8VSOP |
|
IS63LV1024L-10HL-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 32STSOP I |
|
PCF8570T/F5,512NXP Semiconductors |
IC SRAM 2KBIT I2C 100KHZ 8SO |
|
M25PX16-VMN6TPBA TRMicron Technology |
IC FLASH 16MBIT SPI 75MHZ 8SO |
|
MT46H64M32LFMA-5 WT:BMicron Technology |
IC DRAM 2GBIT PARALLEL 168WFBGA |
|
NAND32GW3F4AN6EMicron Technology |
IC FLASH 32GBIT PARALLEL 48TSOP |
|
IS43R32800B-6BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 144MINIBGA |
|
IS42S32200E-6BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 90TFBGA |
|
IS42S16160D-7BISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
AT49BV001-90VCRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32VSOP |
|
MT29F128G08CFAABWP-12:A TRMicron Technology |
IC FLASH 128GBIT PAR 48TSOP I |
|
70261S35PF8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
IS65WV25616BLL-70TLA3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 44TSOP II |