类型 | 描述 |
---|---|
系列: | PL-J |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 128Mb (8M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 60ns |
访问时间: | 60 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -25°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 56-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 56-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT27C4096-15JCRoving Networks / Microchip Technology |
IC EPROM 4MBIT PARALLEL 44PLCC |
|
MT53B128M32D1NP-062 AIT:AMicron Technology |
IC DRAM 4GBIT 1600MHZ 200WFBGA |
|
IDT71V25761YSA200BGIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
IS42S16100E-6TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 50TSOP II |
|
IDT71256TTSA25Y8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
71V432S5PFGIRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
IDT71124S12YGIRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
M29DW256G70NF3EMicron Technology |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
PC28F512P33EF0Micron Technology |
IC FLASH 512MBIT PAR 64EASYBGA |
|
M27C2001-15F1STMicroelectronics |
IC EPROM 2MBIT PARALLEL 32CDIP |
|
AT24C64AW-10SI-2.7Roving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8SOIC |
|
N25Q064A11EF640F TRMicron Technology |
IC FLSH 64MBIT SPI 108MHZ 8VDFPN |
|
IDT71P72604S167BQIRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 165CABGA |