English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MoBL® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 2Mb (128K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 70ns |
| 访问时间: | 70 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 125°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 44-TSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AS4C256M8D3-12BANAlliance Memory, Inc. |
IC DRAM 2GBIT PARALLEL 78FBGA |
|
IS43TR16256A-093NBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
W97BH6KBVX2IWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 134VFBGA |
|
AT49F512-70VCRoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 32VSOP |
|
MT48H4M16LFB4-8 ITMicron Technology |
IC DRAM 64MBIT PARALLEL 54VFBGA |
|
MT48V4M32LFF5-8:GMicron Technology |
IC DRAM 128MBIT PARALLEL 90VFBGA |
|
IS42S16160D-75ETL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
7006S35PF8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 64TQFP |
|
AT29BV020-20JURoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
SST39VF400A-70-4C-C1QERoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 48XFLGA |
|
W632GU6KB12I TRWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96WBGA |
|
71V25761S183BGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
IS42S16800E-75ETLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54TSOP II |
