English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 1Mb (128K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 20ns |
| 访问时间: | 20 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 32-SOIC (0.400", 10.16mm Width) |
| 供应商设备包: | 32-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IDT71T75702S85BGRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
S29GL01GP11TFIR10Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 56TSOP |
|
MTFC8GLVEA-1M WT TRMicron Technology |
IC FLASH 64GBIT MMC 153WFBGA |
|
MT45W1MW16BAFB-706 WTMicron Technology |
IC PSRAM 16MBIT PARALLEL 54VFBGA |
|
GD5F2GQ4RF9IGYGigaDevice |
IC FLASH 2GBIT SPI/QUAD I/O 8LGA |
|
7142LA20JRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
MT53B2DADS-DCMicron Technology |
IC DRAM 16GBIT 200WFBGA |
|
IS42VM16160D-8BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
IS42RM16160E-75BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
IDT71V3556S100PFRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
DS2030W-100#Maxim Integrated |
IC NVSRAM 256KBIT PAR 256BGA |
|
7025S35PF8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 100TQFP |
|
IDT71V256SA12Y8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
