类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 128Mb (16M x 8, 8M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 90ns |
访问时间: | 90 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 56-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 56-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
70V28L15PFIRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
IDT71V65602S100PFGRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
MT46V128M8TG-75:A TRMicron Technology |
IC DRAM 1GBIT PARALLEL 66TSOP |
|
IDT71V3557SA85BQGI8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
USBF4100T-V/NPVAORoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 40MHZ 8USON |
|
AT24C16BN-SH-TRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 1MHZ 8SOIC |
|
IDT71V124SA12TYIRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
S29PL064J70BFW122Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 48FBGA |
|
AS4C256M16D3B-12BINAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
IS42S16800E-7TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54TSOP II |
|
70V24S35J8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 84PLCC |
|
W25X10VSNIGWinbond Electronics Corporation |
IC FLASH 1MBIT SPI 75MHZ 8SOIC |
|
AT28C16E-20PIRoving Networks / Microchip Technology |
IC EEPROM 16KBIT PARALLEL 24DIP |