English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Synchronous |
| 内存大小: | 2Mb (64K x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 166 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 3.6 ns |
| 电压 - 电源: | 3.15V ~ 3.45V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 208-BFQFP |
| 供应商设备包: | 208-PQFP (28x28) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS46LD32320A-3BPLA25ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 168VFBGA |
|
W25Q32BVSFJGWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 16SOIC |
|
AT49F001N-55TIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32TSOP |
|
AT24C32E-UUM0B-TRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 1MHZ 5WLCSP |
|
CY7C1329H-166AXCCypress Semiconductor |
IC SRAM 2MBIT PARALLEL 100TQFP |
|
IS42VM16160E-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
70V3579S4DRRenesas Electronics America |
IC SRAM 1.125MBIT PAR 208PQFP |
|
AT25256W-10SC-1.8Roving Networks / Microchip Technology |
IC EEPROM 256KBIT SPI 8SOIC |
|
FT25L04S-RTFremont Micro Devices |
IC FLASH 4MBIT SPI 40MHZ 8SOP |
|
AT24C02B-TSU-TRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ SOT23-5 |
|
IDT71V67603S133PFIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
S29GL064S90TFIV20Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 56TSOP |
|
AT28HC256-90FM/883-023Roving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28FLATPK |
