类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 1Mb (128K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 12ns |
访问时间: | 12 ns |
电压 - 电源: | 3.15V ~ 3.45V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 36-TFBGA |
供应商设备包: | 36-miniBGA (8x10) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1351S-100AXCTCypress Semiconductor |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
S29PL127J70TAI130DCypress Semiconductor |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
709269L12PFRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
S25FL128LAGNFI011Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
IDT71V416S15PHIRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
DS2430A-002-E1Maxim Integrated |
IC EEPROM 256B 1-WIRE TO92-3 |
|
MT48V4M32LFB5-8 XT:G TRMicron Technology |
IC DRAM 128MBIT PARALLEL 90VFBGA |
|
MT25QU512ABB1EW9-0SITMicron Technology |
IC FLASH 512MBIT SPI 8WPDFN |
|
IDT71V35761YS200PFRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
M29W400DT70N6F TRMicron Technology |
IC FLASH 4MBIT PARALLEL 48TSOP |
|
CY7C1472BV33-200BZCTCypress Semiconductor |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
AS4C128M8D3LA-12BINAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 78FBGA |
|
W25X16VSFIGWinbond Electronics Corporation |
IC FLASH 16MBIT SPI 75MHZ 16SOIC |