类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100 |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3 |
内存大小: | 2Gb (128M x 16) |
内存接口: | Parallel |
时钟频率: | 1.066 GHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 20 ns |
电压 - 电源: | 1.425V ~ 1.575V |
工作温度: | 0°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 96-TFBGA |
供应商设备包: | 96-TWBGA (9x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
W25Q64FWZPIQ TRWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 8WSON |
|
MT46H128M32L2KQ-5 IT:AMicron Technology |
IC DRAM 4GBIT PARALLEL 168WFBGA |
|
W25Q16DVSNJG TRWinbond Electronics Corporation |
IC FLASH 16MBIT SPI/QUAD 8SOIC |
|
IS43LR32400F-6BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
CY7C1041BNL-15ZXCTCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
W25X16AVSNIGWinbond Electronics Corporation |
IC FLASH 16MBIT SPI 75MHZ 8SOIC |
|
CY7C1021CV33-12VXETCypress Semiconductor |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
CY7C1426SV18-250BZCCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
AT25HP256W-10SI-1.8Roving Networks / Microchip Technology |
IC EEPROM 256KBIT SPI 8SOIC |
|
IDT71V3558SA133BG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
IS42S16800F-7BIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 54TFBGA |
|
IDT71T75702S75PFGRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
MT48LC64M4A2TG-6A:DMicron Technology |
IC DRAM 256MBIT PAR 54TSOP II |