English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Discontinued at Digi-Key |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - Mobile |
| 内存大小: | 128Mb (8M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 133 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 6 ns |
| 电压 - 电源: | 1.7V ~ 1.95V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 54-TFBGA |
| 供应商设备包: | 54-TFBGA (8x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
JS28F256M29EWHAMicron Technology |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
AT49BV6416-70TURoving Networks / Microchip Technology |
IC FLASH 64MBIT PARALLEL 48TSOP |
|
W25X40CLDAIGWinbond Electronics Corporation |
IC FLASH 4MBIT SPI 104MHZ 8DIP |
|
MT47H64M16HR-3 IT:HMicron Technology |
IC DRAM 1GBIT PARALLEL 84FBGA |
|
MT47H32M16HR-25E AIT:GMicron Technology |
IC DRAM 512MBIT PARALLEL 84FBGA |
|
IS61WV102416DALL-10TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 16MBIT PARALLEL 48TSOP I |
|
MT46V64M8FN-75:DMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
IS29GL512S-11DHB013Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
MT29F128G08CEEDBJ4-12IT:D TRMicron Technology |
IC FLASH 128GBIT PAR 132VBGA |
|
M25P16-VMW6TG TRMicron Technology |
IC FLASH 16MBIT SPI 75MHZ 8SO W |
|
W25Q32FVZPIQWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 8WSON |
|
MT48LC4M16A2P-7E:G TRMicron Technology |
IC DRAM 64MBIT PAR 54TSOP II |
|
24FC04-E/STRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8TSSOP |
