类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 4.5Mb (128K x 36) |
内存接口: | Parallel |
时钟频率: | 200 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3.1 ns |
电压 - 电源: | 3.135V ~ 3.465V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 119-BGA |
供应商设备包: | 119-PBGA (14x22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IDT71T75902S85BGGIRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
IS61LF102418A-6.5TQL-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
IS41C16256C-35TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4MBIT PARALLEL 40TSOP |
|
M27C801-100N1STMicroelectronics |
IC EPROM 8MBIT PARALLEL 32TSOP |
|
W25B40AVSNIG T&RWinbond Electronics Corporation |
IC FLASH 4MBIT SPI 40MHZ 8SOIC |
|
MT41K512M8RH-125 V:E TRMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
MT28EW256ABA1LPC-1SITMicron Technology |
IC FLASH 256MBIT PARALLEL 64LBGA |
|
S29PL032J55BFI120ACypress Semiconductor |
IC FLASH 32MBIT PARALLEL 48FBGA |
|
AT27BV512-90TIRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 28TSOP |
|
IDT71V424S15YI8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
S29CL016J0PFFM033Cypress Semiconductor |
IC FLASH 16MBIT PARALLEL 80FBGA |
|
IS42VS16160J-75TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
IDT71V124SA20PHIRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 32TSOP II |