English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NAND |
| 内存大小: | 64Gb (8G x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 48-TFSOP (0.724", 18.40mm Width) |
| 供应商设备包: | 48-TSOP I |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY7C1512TV18-167BZXCCypress Semiconductor |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
IDT71124S15YIRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
AT24C02AN-10SI-2.5Roving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
IDT71024S12TYI8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
AT93C56-10SI-2.5Roving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
MT46V64M8BN-75 L:DMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
AT27C080-12RCRoving Networks / Microchip Technology |
IC EPROM 8MBIT PARALLEL 32SOIC |
|
MT47H32M16HR-25E IT:G TRMicron Technology |
IC DRAM 512MBIT PARALLEL 84FBGA |
|
MTFC64GJDDN-3M WT TRMicron Technology |
IC FLASH 512KBIT MMC 169LFBGA |
|
IDT71V416VS15PHGIRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
M28W320HSU70ZA6EMicron Technology |
IC FLASH 32MBIT PARALLEL 64TFBGA |
|
AT27C020-12TCRoving Networks / Microchip Technology |
IC EPROM 2MBIT PARALLEL 32TSOP |
|
BR24T256-WROHM Semiconductor |
IC EEPROM 256KBIT I2C 8DIP |
