类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 1Mb (32K x 32) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | 8 ns |
电压 - 电源: | 3.135V ~ 3.63V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IDT71V416VS12PHI8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
W25Q64CVSFJGWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 16SOIC |
|
CY7C1049CV33-20VXCCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
MT29F768G08EECBBJ4-37ES:B TRMicron Technology |
IC FLASH 768GBIT PAR 132VBGA |
|
TC58NVG1S3ETA00Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 2GBIT PARALLEL 48TSOP I |
|
AT27BV512-70TIRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 28TSOP |
|
AS4C512M8D3LA-12BINTRAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
7008L35JRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 84PLCC |
|
AS4C128M8D3A-12BCNTRAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 78FBGA |
|
AT21CS01-STUM13-TRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 125KHZ SOT23 |
|
MT53D384M32D2DS-046 AUT:C TRMicron Technology |
IC DRAM 12GBIT 2133MHZ 200WFBGA |
|
M27C4002-70C1STMicroelectronics |
IC EPROM 4MBIT PARALLEL 44PLCC |
|
MT29F64G08AFAAAWP-IT:A TRMicron Technology |
IC FLSH 64GBIT PARALLEL 48TSOP I |