类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 8Kb (1K x 8, 512 x 16) |
内存接口: | SPI |
时钟频率: | 2 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SO |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT45DB161B-TIRoving Networks / Microchip Technology |
IC FLASH 16MBIT SPI 20MHZ 28TSOP |
|
IDT71V632S8PFG8Renesas Electronics America |
IC SRAM 2MBIT PARALLEL 100TQFP |
|
7024S25JRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 84PLCC |
|
MT46H64M16LFCK-6 IT:A TRMicron Technology |
IC DRAM 1GBIT PARALLEL 60VFBGA |
|
MX25UW51245GXDQ00Macronix |
IC FLASH 512MBIT SPI/QUAD 24BGA |
|
MT48H8M16LFF4-8Micron Technology |
IC DRAM 128MBIT PARALLEL 54VFBGA |
|
AT49SV802AT-90TIRoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 48TSOP |
|
MTFC16GAPALBH-AIT TRMicron Technology |
IC FLASH 128GBIT MMC 153TFBGA |
|
IS63LV1024L-12BI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 36MINIBGA |
|
IS43DR16160A-3DBI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 84TWBGA |
|
AT28LV256-20TIRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28TSOP |
|
CAT28C64BGI90Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 64KBIT PARALLEL 32PLCC |
|
MT48LC2M32B2P-5:G TRMicron Technology |
IC DRAM 64MBIT PAR 86TSOP II |