类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 16Kb (2K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 35ns |
访问时间: | 35 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 24-SOIC (0.295", 7.50mm Width) |
供应商设备包: | 24-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT41K1G8RKB-107:N TRMicron Technology |
IC DRAM 8GBIT PARALLEL 78FBGA |
|
S29GL128P10TAI010Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
MT25QL128ABA1ESF-0SIT TRMicron Technology |
IC FLASH 128MBIT SPI 133MHZ 16SO |
|
AT29C512-20PIRoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 32DIP |
|
AT27C010L-70JCRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 32PLCC |
|
IS42S32400E-6TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 86TSOP II |
|
SST25PF040C-40I/MF18GVAORoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 40MHZ 8WDFN |
|
IS62WV25616BLL-55BIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 48MINIBGA |
|
MT48LC8M16A2B4-6A:LMicron Technology |
IC DRAM 128MBIT PARALLEL 54VFBGA |
|
W9751G6IB-25Winbond Electronics Corporation |
IC DRAM 512MBIT PARALLEL 84WBGA |
|
MT28F320J3RG-11 GMETMicron Technology |
IC FLSH 32MBIT PARALLEL 56TSOP I |
|
AT27LV512A-70TCRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 28TSOP |
|
AT49F002-70JCRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |