类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, MoBL |
内存大小: | 256Kb (16K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 40ns |
访问时间: | 40 ns |
电压 - 电源: | 1.7V ~ 1.9V, 2.4V ~ 2.6V, 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-VFBGA |
供应商设备包: | 100-VFBGA (6x6) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
N25Q256A13E1241EMicron Technology |
IC FLASH 256MBIT SPI 24TPBGA |
![]() |
MT47H128M8CF-25E AIT:HMicron Technology |
IC DRAM 1GBIT PARALLEL 60FBGA |
![]() |
IS42S16160D-7BI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
![]() |
NM27C128Q150Sanyo Semiconductor/ON Semiconductor |
IC EPROM 128KBIT PARALLEL 28CDIP |
![]() |
CY7C1423TV18-267BZCCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
![]() |
AS4C4M16D1-5TINAlliance Memory, Inc. |
IC DRAM 64MBIT PAR 66TSOP II |
![]() |
IS61WV102416ALL-20MIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 16MBIT PAR 48MINIBGA |
![]() |
CYD18S36V18-167BBAICypress Semiconductor |
IC SRAM 18MBIT PARALLEL 256FBGA |
![]() |
R1LV0108ESN-7SR#B0Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOP |
![]() |
IS61LV6416-8TLISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 44TSOP II |
![]() |
IS25WP016-JMLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 16MBIT SERIAL 16SOIC |
![]() |
IS43TR85120BL-125KBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 78TWBGA |
![]() |
93LC46B-I/SN15KVAORoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |