English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q100, SST26 SQI® |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH |
| 内存大小: | 16M (2M x 8) |
| 内存接口: | SPI - Quad I/O |
| 时钟频率: | 80 MHz |
| 写周期时间 - 字，页: | 1.5ms |
| 访问时间: | - |
| 电压 - 电源: | 2.3V ~ 3.6V |
| 工作温度: | -40°C ~ 125°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS43DR86400C-3DBIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TWBGA |
|
709099L9PFRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
W25X16VSSIG T&RWinbond Electronics Corporation |
IC FLASH 16MBIT SPI 75MHZ 8SOIC |
|
IDT71V3557SA85BQG8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
70V9079L12PFRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
IS29GL256S-10TFV02Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
BR93C86-WDS6TPROHM Semiconductor |
IC EEPROM 16KBIT SPI 2MHZ 8TSSOP |
|
IS61LV25616AL-10T-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
MT25QL512ABA8E12-0SIT TRMicron Technology |
IC FLASH 512MBIT SPI 24TPBGA |
|
MT29F32G08CBACAWP-ITZ:CMicron Technology |
IC FLSH 32GBIT PARALLEL 48TSOP I |
|
STK22C48-SF25ICypress Semiconductor |
IC NVSRAM 16KBIT PARALLEL 28SOIC |
|
MT29F64G08CECCBH1-12Z:CMicron Technology |
IC FLASH 64GBIT PARALLEL 100VBGA |
|
QMP29GL512P11TFI010Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 56TSOP |
