类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 9Mb (256K x 36) |
内存接口: | Parallel |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | - |
访问时间: | 6.5 ns |
电压 - 电源: | 3.135V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 119-BGA |
供应商设备包: | 119-PBGA (14x22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS45S16800E-6BLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 54TFBGA |
|
AT49BV512-12TIRoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 32TSOP |
|
IDT71V65603S100PFIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
AT49BV320C-70CIRoving Networks / Microchip Technology |
IC FLASH 32MBIT PARALLEL 47CBGA |
|
FT24C64A-USG-BFremont Micro Devices |
IC EEPROM 64KBIT I2C 800KHZ 8SOP |
|
S34MS01G200BHI003SkyHigh Memory Limited |
IC FLASH 1G PARALLEL 63BGA |
|
CAT24C256LI-GSanyo Semiconductor/ON Semiconductor |
IC EEPROM 256KBIT I2C 1MHZ 8DIP |
|
R1RP0416DGE-2PI#B1Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
N25Q00AA13GSF40F TRMicron Technology |
IC FLASH 1GBIT SPI 108MHZ 16SOP |
|
93C86AT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8SOIC |
|
AT28HC256E-90PIRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PARALLEL 28DIP |
|
MX29SL800CBTI-90GMacronix |
IC FLASH 8MBIT PARALLEL 48TSOP |
|
AT27C2048-15JCRoving Networks / Microchip Technology |
IC EPROM 2MBIT PARALLEL 44PLCC |