类型 | 描述 |
---|---|
系列: | FL-P |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 128Mb (16M x 8) |
内存接口: | SPI - Quad I/O |
时钟频率: | 104 MHz |
写周期时间 - 字,页: | 5µs, 3ms |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 105°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-WDFN Exposed Pad |
供应商设备包: | 8-WSON (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT29LV010A-25TCRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32TSOP |
|
MT29F8G08ABACAH4:C TRMicron Technology |
IC FLASH 8GBIT PARALLEL 63VFBGA |
|
AT49LV002N-90VCRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32VSOP |
|
MT48LC4M32B2P-6A XIT:LMicron Technology |
IC DRAM 128MBIT PAR 86TSOP II |
|
71V30L35TFIRenesas Electronics America |
IC SRAM 8KBIT PARALLEL 64TQFP |
|
AT28HC64B-70SARoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28SOIC |
|
IDT71V3577SA80BQGIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
BR24G16-3ROHM Semiconductor |
IC EEPROM 16KBIT I2C 400KHZ 8DIP |
|
S29PL064J60BFW123Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 48FBGA |
|
NM24C04LEM8Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 4KBIT I2C 100KHZ 8SO |
|
23LC1024T-I/SNVAORoving Networks / Microchip Technology |
IC SRAM 1MBIT SPI/QUAD I/O 8SOIC |
|
W25Q16JVSSJMWinbond Electronics Corporation |
IC FLASH 16MBIT SPI/QUAD 8SOIC |
|
70V27L55PF8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |