类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 512Kb (64K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 35ns |
访问时间: | 35 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT47H128M16PK-25E IT:CMicron Technology |
IC DRAM 2GBIT PARALLEL 84FBGA |
|
S34ML01G200TFA000SkyHigh Memory Limited |
IC FLASH 1G PARALLEL 48TSOP I |
|
CAT28F001G-90BSanyo Semiconductor/ON Semiconductor |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
DS1258Y-70IND#Maxim Integrated |
IC NVSRAM 2MBIT PARALLEL 40EDIP |
|
PZ28F064M29EWLXMicron Technology |
IC FLASH 64MBIT PARALLEL 48BGA |
|
S29GL128S90FFA020Cypress Semiconductor |
IC FLASH 128MB FLASH NOR 64FBGA |
|
W25Q256JVCJQWinbond Electronics Corporation |
IC FLSH 256MBIT SPI/QUAD 24TFBGA |
|
S29GL128S11FHI010Cypress Semiconductor |
IC FLASH 128MB FLASH NOR 64FBGA |
|
MT29F4G08ABADAH4:DMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
MT29F128G08EBEBBWP:B TRMicron Technology |
IC FLASH 128GBIT PAR 48TSOP I |
|
AT49BV002NT-12TCRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32TSOP |
|
IS49NLC96400-25BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 144FCBGA |
|
AT24C16C-XPD-TRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 1MHZ 8TSSOP |