类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPDDR4 |
内存大小: | 16Gb (512M x 32) |
内存接口: | - |
时钟频率: | 2.133 GHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.1V |
工作温度: | -30°C ~ 85°C (TC) |
安装类型: | Surface Mount |
包/箱: | 200-WFBGA |
供应商设备包: | 200-WFBGA (10x14.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S34MS02G200GHV000SkyHigh Memory Limited |
IC FLASH 2G PARALLEL |
|
93C86BT-E/OT15KVAORoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI SOT23-6 |
|
AT24C128-10TU-1.8Roving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 8TSSOP |
|
93C76B-I/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ 8SOIC |
|
AT49LV1024A-45VCRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 40VSOP |
|
MT48H16M32L2B5-10 IT TRMicron Technology |
IC DRAM 512MBIT PARALLEL 90VFBGA |
|
MX25U6435EZNI-12GMacronix |
IC FLASH 64MBIT SPI/QUAD 8WSON |
|
MT40A512M8RH-083E IT:B TRMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
IDT71V416VS10PHI8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
S25FL032P0XMFV003MCypress Semiconductor |
IC FLASH 32MBIT SPI/QUAD 16SOIC |
|
AT49LV002-90TCRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32TSOP |
|
S29PL032J70BAI122Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 48FBGA |
|
MT48LC16M16A2P-6A IT:GMicron Technology |
IC DRAM 256MBIT PAR 54TSOP II |