类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 8Kb (1K x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 4.5 µs |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Through Hole |
包/箱: | 8-DIP (0.300", 7.62mm) |
供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT49BV163A-70TURoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
AT29C256-15TCRoving Networks / Microchip Technology |
IC FLASH 256KBIT PARALLEL 28TSOP |
|
M29W640GL70ZA6EMicron Technology |
IC FLASH 64MBIT PARALLEL 48TFBGA |
|
NAND128W3A0AN6FSTMicroelectronics |
IC FLASH 128MBIT PARALLEL 48TSOP |
|
MT46V64M8P-6T L:FMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
|
MT29F4G16ABCWC:CMicron Technology |
IC FLASH 4GBIT PARALLEL 48TSOP |
|
MT46H64M32LFMA-5 IT:B TRMicron Technology |
IC DRAM 2GBIT PARALLEL 168WFBGA |
|
IDT71256SA20Y8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
AT29BV010A-12JCRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
MT46V128M4BN-5B:F TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
M48Z35Y-70MH6ESTMicroelectronics |
IC NVSRAM 256KBIT PARALLEL 28SOH |
|
70P3519S166BCGRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 256CABGA |
|
IS43TR85120AL-15HBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 78TWBGA |