类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH |
内存大小: | 4Mb (512K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 20ms |
访问时间: | 200 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TC) |
安装类型: | Surface Mount |
包/箱: | 32-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 32-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S34MS01G104BHV010SkyHigh Memory Limited |
IC FLASH 1G PARALLEL 63BGA |
|
IDT71V016SA12YI8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
M29W640FT70ZA6F TRMicron Technology |
IC FLASH 64MBIT PARALLEL 48TFBGA |
|
IDT71V016SA10Y8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
IS42S32400B-7TISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 86TSOP II |
|
MX29SL800CBXEC-90GMacronix |
IC FLASH 8MBIT PARALLEL 48LFBGA |
|
IS43LR16200C-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 32MBIT PARALLEL 60TFBGA |
|
70T3519S133DRRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 208PQFP |
|
IS43DR16128B-3DBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 84TWBGA |
|
AT28HC256E-12JU-070Roving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 32PLCC |
|
709089L12PFI8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
IS63LV1024L-12BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 36MINIBGA |
|
CAT28F512GI-90TSanyo Semiconductor/ON Semiconductor |
IC FLASH 512KBIT PARALLEL 32PLCC |