类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM |
内存大小: | 64Mb (2M x 32) |
内存接口: | Parallel |
时钟频率: | 143 MHz |
写周期时间 - 字,页: | - |
访问时间: | 5.5 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 86-TFSOP (0.400", 10.16mm Width) |
供应商设备包: | 86-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
W25Q128FVPIFWinbond Electronics Corporation |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
MT41K128M16HA-15E:DMicron Technology |
IC DRAM 2GBIT PARALLEL 96FBGA |
|
S29GL512P11FAI012Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64BGA |
|
70V24L15JRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 84PLCC |
|
M95080-MN6TPSTMicroelectronics |
IC EEPROM 8KBIT SPI 10MHZ 8SO |
|
AT49BV320DT-70CURoving Networks / Microchip Technology |
IC FLASH 32MBIT PARALLEL 47CBGA |
|
7038L20PF8Renesas Electronics America |
IC SRAM 1.125MBIT PAR 100TQFP |
|
MT45W4MW16BFB-708 WT TRMicron Technology |
IC PSRAM 64MBIT PARALLEL 54VFBGA |
|
MT48H16M32L2F5-10 IT TRMicron Technology |
IC DRAM 512MBIT PARALLEL 90VFBGA |
|
AT27C512R-45PCRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 28DIP |
|
MT49H16M18SJ-25 IT:BMicron Technology |
IC DRAM 288MBIT PARALLEL 144FBGA |
|
M48Z2M1Y-70PL1STMicroelectronics |
IC NVSRAM 16MBIT PAR 36PLDIP |
|
70V25S15PF8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 100TQFP |