English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 4Mb (256K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 12ns |
| 访问时间: | 12 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 44-TSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
71V35761SA200BQGIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
AT49F001N-12TIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32TSOP |
|
AT28C16E-20JCRoving Networks / Microchip Technology |
IC EEPROM 16KBIT PARALLEL 32PLCC |
|
M27C256B-90B6STMicroelectronics |
IC EPROM 256KBIT PARALLEL 28DIP |
|
IDT71V124SA12PH8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32TSOP II |
|
S29GL128P10FFI0102Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
W25X40BVZPIGWinbond Electronics Corporation |
IC FLASH 4MBIT SPI 104MHZ 8WSON |
|
MT47H64M8CF-25E:GMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
W25X40VSNIG T&RWinbond Electronics Corporation |
IC FLASH 4MBIT SPI 75MHZ 8SOIC |
|
CY7C038V-25AXCCypress Semiconductor |
IC SRAM 1.152MBIT PAR 100TQFP |
|
S29GL128P10FFIS12Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
70V24S15PFRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 100TQFP |
|
IS61LV6416-10TIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 44TSOP II |
