English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q100 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - Mobile LPDDR4 |
| 内存大小: | 4Gb (128M x 32) |
| 内存接口: | - |
| 时钟频率: | 1.6 GHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.1V |
| 工作温度: | -40°C ~ 105°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 200-WFBGA |
| 供应商设备包: | 200-WFBGA (10x14.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IDT71V25761S200PF8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
W971GG8JB25IWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 60WBGA |
|
71321SA25TF8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 64TQFP |
|
AT27C020-90JIRoving Networks / Microchip Technology |
IC EPROM 2MBIT PARALLEL 32PLCC |
|
AT29LF020-25JCRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
IS43LD16640A-25BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 134TFBGA |
|
70V261L25PF8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
MT47H64M16HR-187E:HMicron Technology |
IC DRAM 1GBIT PARALLEL 84FBGA |
|
NM27C010VE200Sanyo Semiconductor/ON Semiconductor |
IC EPROM 1MBIT PARALLEL 32PLCC |
|
IDT71V416S15YIRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
AT28HC64B-90SIRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28SOIC |
|
7025L25PFRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 100TQFP |
|
W25Q128FVSIFWinbond Electronics Corporation |
IC FLASH 128MBIT SPI/QUAD 8SOIC |
