English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM |
| 内存大小: | 16Mb (1M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 166 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 5.5 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 50-TSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 50-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT45DB021D-SH-BRoving Networks / Microchip Technology |
IC FLASH 2MBIT SPI 66MHZ 8SOIC |
|
M29W320DB70N3F TRMicron Technology |
IC FLASH 32MBIT PARALLEL 48TSOP |
|
CY7C1443KV33-133AXICypress Semiconductor |
IC SRAM 36MBIT PARALLEL 100TQFP |
|
AT29BV020-25JCRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
AT49LH002-33TCRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 40TSOP |
|
CY7C1470BV25-200BZCTCypress Semiconductor |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
JS28F512P30BFAMicron Technology |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
AT28HC256E-70JIRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 32PLCC |
|
MT29F256G08CJAAAWP-IT:A TRMicron Technology |
IC FLASH 256GBIT PAR 48TSOP I |
|
IS61DDB41M36-250M3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |
|
AT28HC256-70TCRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28TSOP |
|
CY7C1383D-100AXCCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
IDT71V35761YSA183BQI8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
