English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | EPROM |
| 技术: | EPROM - OTP |
| 内存大小: | 1Mb (128K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | 70 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 32-TFSOP (0.724", 18.40mm Width) |
| 供应商设备包: | 32-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S34ML08G201BHB000SkyHigh Memory Limited |
IC FLASH 8G PARALLEL |
|
S29GL256P10FFIS13Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
7142LA35PRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 48DIP |
|
709359L6PF8Renesas Electronics America |
IC SRAM 144K PARALLEL 100TQFP |
|
IS61NLP102418-200B3LI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
MT46V32M16P-6T:C TRMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
|
S34ML01G100BHB000SkyHigh Memory Limited |
IC FLASH 1G PARALLEL 63BGA |
|
IS61LPS51236A-200TQI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
70V3389S6PRFIRenesas Electronics America |
IC SRAM 1.125MBIT PAR 128TQFP |
|
MT48LC8M16LFF4-10:GMicron Technology |
IC DRAM 128MBIT PARALLEL 54VFBGA |
|
AT25320T2-10TC-2.7Roving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 20TSSOP |
|
AT24C16C-SSPD-TRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 1MHZ 8SOIC |
|
MT45W2MW16BABB-706 L WTMicron Technology |
IC PSRAM 32MBIT PARALLEL 54VFBGA |
