English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR (ZBT) |
| 内存大小: | 4.5Mb (128K x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 100 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 5 ns |
| 电压 - 电源: | 3.135V ~ 3.465V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 165-TBGA |
| 供应商设备包: | 165-CABGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT49BV002T-12JCRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
MT29E384G08EBHBBJ4-3:BMicron Technology |
IC FLASH 384GBIT PAR 132VBGA |
|
AT27C010L-70PIRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 32DIP |
|
IS43DR16160A-25EBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 84TWBGA |
|
709269S9PF8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
MT46V32M8BG-6:GTRMicron Technology |
IC DRAM 256MBIT PARALLEL 60FBGA |
|
MM74C910NSanyo Semiconductor/ON Semiconductor |
IC RAM 256B PARALLEL 18DIP |
|
MT40A512M16JY-083E AUT:BMicron Technology |
IC DRAM 8GBIT PARALLEL 96FBGA |
|
CAT28C256LI12Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 256KBIT PARALLEL 28DIP |
|
AT29C1024-90TCRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 48TSOP |
|
AT24C01BN-SH-TRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 1MHZ 8SOIC |
|
NM93CS06EM8Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 256B SPI 1MHZ 8SO |
|
AT49F002N-70PIRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32DIP |
