类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 256Kb (32K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 15ns |
访问时间: | 15 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Through Hole |
包/箱: | 28-DIP (0.300", 7.62mm) |
供应商设备包: | 28-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SST25VF032B-80-4I-S2AF-TRoving Networks / Microchip Technology |
IC FLASH 32MBIT SPI 80MHZ 8SOIC |
|
S25FL129P0XMFV010Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
M28W640HCB70N6EMicron Technology |
IC FLASH 64MBIT PARALLEL 48TSOP |
|
IDT71V416VS10PH8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
CY7C1440AV33-167BZCTCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
S25FL064P0XNFB000Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 8WSON |
|
S29JL064J60TFI003Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 48TSOP |
|
70V38L15PFRenesas Electronics America |
IC SRAM 1.125MBIT PAR 100TQFP |
|
IS61LF51218A-7.5TQIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
W631GU8KB-15 TRWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 78WBGA |
|
7024S15JRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 84PLCC |
|
CY7C136-55JXCCypress Semiconductor |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
MT48LC8M8A2TG-7E L:GMicron Technology |
IC DRAM 64MBIT PAR 54TSOP II |