类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, DDR II |
内存大小: | 16Mb (2M x 8) |
内存接口: | Parallel |
时钟频率: | 250 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-LBGA |
供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS66WVC2M16ALL-7010BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 32MBIT PARALLEL 54VFBGA |
|
W25Q128FVSJP TRWinbond Electronics Corporation |
IC FLASH 128MBIT SPI/QUAD 8SOIC |
|
7140LA35PRenesas Electronics America |
IC SRAM 8KBIT PARALLEL 48DIP |
|
MT29F1G08ABADAH4-ITX:DMicron Technology |
IC FLASH 1GBIT PARALLEL 63VFBGA |
|
IDT71V3558S166BGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
SST25PF040CT-40E/SN18GVAORoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 40MHZ 8SOIC |
|
AT27C020-15PCRoving Networks / Microchip Technology |
IC EPROM 2MBIT PARALLEL 32DIP |
|
AT49F001T-12VCRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32VSOP |
|
M29F400BT70N6Micron Technology |
IC FLASH 4MBIT PARALLEL 48TSOP |
|
IDT71V416S20PHRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
IS41LV16105B-60TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 44TSOP II |
|
MT29F64G08CECCBH1-12ITZ:CMicron Technology |
IC FLASH 64GBIT PARALLEL 100VBGA |
|
AT25020AN-10SI-1.8-TRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 20MHZ 8SOIC |