类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 32Mb (4M x 8) |
内存接口: | SPI - Quad I/O, QPI, DTR |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | 800µs |
访问时间: | - |
电压 - 电源: | 1.65V ~ 1.95V |
工作温度: | -40°C ~ 105°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.209", 5.30mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
W25Q257FVFIG TRWinbond Electronics Corporation |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
RC28F320J3D75B TRMicron Technology |
IC FLASH 32MBIT PAR 64EASYBGA |
|
MX25R6435FM1IL0Macronix |
IC FLSH 64MBIT SPI/QUAD I/O 8SOP |
|
AT28C16E-15PIRoving Networks / Microchip Technology |
IC EEPROM 16KBIT PARALLEL 24DIP |
|
IDT71V3557SA75BQ8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
IDT71V3557SA75BGGIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
MT29F4G08ABADAH4-AT:D TRMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
DS1250W-100Maxim Integrated |
IC NVSRAM 4MBIT PARALLEL 32EDIP |
|
24AA512-I/MSRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8MSOP |
|
AT49LV002T-70VCRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32VSOP |
|
24LC16BT-I/OTGRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C SOT23-5 |
|
AS6C4016A-55BINAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 48TFBGA |
|
71321LA20J8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |