English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 4Kb (512 x 8) |
| 内存接口: | I²C |
| 时钟频率: | 400 kHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | 900 ns |
| 电压 - 电源: | 1.8V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
| 供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT48LC4M16A2P-7E:JMicron Technology |
IC DRAM 64MBIT PAR 54TSOP II |
|
MT40A256M16GE-083E:B TRMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
CY7C1327S-133AXICypress Semiconductor |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
AS4C32M16D2-25BANTRAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 84TFBGA |
|
M25P05-AVDW6TP TRMicron Technology |
IC FLASH 512KBIT SPI 8TSSOP |
|
709289L9PF8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
IS61LF102418A-7.5TQ-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
AS4C64M16MD2-25BCNTRAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 134FBGA |
|
IS42S16800E-75ETL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54TSOP II |
|
AT49F001-55VIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32VSOP |
|
AT27LV020A-12TCRoving Networks / Microchip Technology |
IC EPROM 2MBIT PARALLEL 32TSOP |
|
AT27C2048-12JCRoving Networks / Microchip Technology |
IC EPROM 2MBIT PARALLEL 44PLCC |
|
IDT71V416VL10BEGIRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 48CABGA |
