English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 4Mb (512K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 20ns |
| 访问时间: | 20 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 36-BSOJ (0.400", 10.16mm Width) |
| 供应商设备包: | 36-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT48LC16M16A2P-7E IT:GMicron Technology |
IC DRAM 256MBIT PAR 54TSOP II |
|
S34MS01G104BHB013SkyHigh Memory Limited |
IC FLASH 1G PARALLEL 63BGA |
|
FT24C04A-ESG-TFremont Micro Devices |
IC EEPROM 4KBIT I2C 1MHZ 8SOP |
|
IS61NLP204818A-166TQ-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 100LQFP |
|
JS28F128J3D75AMicron Technology |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
7130SA100J8Renesas Electronics America |
IC SRAM 8KBIT PARALLEL 52PLCC |
|
IS42S16100C1-5TISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 50TSOP II |
|
S34ML04G200BHI903SkyHigh Memory Limited |
IC FLASH 4G PARALLEL 63BGA |
|
AT27C256R-15TCRoving Networks / Microchip Technology |
IC EPROM 256KBIT PARALLEL 28TSOP |
|
IS46TR16640CL-125JBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
7016L25PFRenesas Electronics America |
IC SRAM 144K PARALLEL 80TQFP |
|
IDT71T75802S150PFI8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
MT46V64M16P-75:A TRMicron Technology |
IC DRAM 1GBIT PARALLEL 66TSOP |
