类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 1Mb (64K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 15ns |
访问时间: | 15 ns |
电压 - 电源: | 2.5V ~ 2.7V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-VFBGA |
供应商设备包: | 48-VFBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS61VPS102418A-250B3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
AT24C32-10PC-1.8Roving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 400KHZ 8DIP |
|
7130SA100PFRenesas Electronics America |
IC SRAM 8KBIT PARALLEL 64TQFP |
|
MT28F004B5VG-8 T TRMicron Technology |
IC FLASH 4MBIT PARALLEL 40TSOP I |
|
M29W400BT55ZA1Micron Technology |
IC FLASH 4MBIT PARALLEL 48TFBGA |
|
IS61QDB41M36C-250M3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |
|
AT27BV010-90TURoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 32TSOP |
|
CY14MB064J1-SXITCypress Semiconductor |
IC NVSRAM 64KBIT I2C 8SOIC |
|
BQ4013YMA-120Texas Instruments |
IC NVSRAM 1MBIT PAR 32DIP MODULE |
|
IDT70P3537S233RMIRenesas Electronics America |
IC SRAM 18MBIT PAR 576FCBGA |
|
IS41LV16105B-50KL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PARALLEL 42SOJ |
|
W25X40AVSNIGWinbond Electronics Corporation |
IC FLASH 4MBIT SPI 100MHZ 8SOIC |
|
IS42S32160B-7BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90LFBGA |