English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH |
| 内存大小: | 1Mb (128K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 20ms |
| 访问时间: | 150 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 32-LCC (J-Lead) |
| 供应商设备包: | 32-PLCC (13.97x11.43) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS45S32800D-7BLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
AT27C040-15RCRoving Networks / Microchip Technology |
IC EPROM 4MBIT PARALLEL 32SOIC |
|
AT25020A-10PI-1.8Roving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 20MHZ 8DIP |
|
CY14MB064J2A-SXITCypress Semiconductor |
IC NVSRAM 64KBIT I2C 8SOIC |
|
70V24L20PFIRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 100TQFP |
|
IDT71V424S10Y8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
MT29F256G08EECBBJ4-6:BMicron Technology |
IC FLASH 256GBIT PAR 132VBGA |
|
MT46V32M8P-6T:GTRMicron Technology |
IC DRAM 256MBIT PARALLEL 66TSOP |
|
AT49F002-90VCRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32VSOP |
|
MT40A256M16GE-062E IT:B TRMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
AT49BV6416T-70TI-TRoving Networks / Microchip Technology |
IC FLASH 64MBIT PARALLEL 48TSOP |
|
SST25VF016B-75-4I-QAFRoving Networks / Microchip Technology |
IC FLASH 16MBIT SPI 80MHZ 8WSON |
|
AT49BV1604A-12TIRoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TSOP |
