类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 1Kb (64 x 16) |
内存接口: | SPI |
时钟频率: | 1 MHz |
写周期时间 - 字,页: | 10ms |
访问时间: | - |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Through Hole |
包/箱: | 14-DIP (0.300", 7.62mm) |
供应商设备包: | 14-DIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
70V27S25PF8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
AT49F001NT-70PCRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32DIP |
|
MT29F4G08ABAEAH4:EMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
709349L6PFRenesas Electronics America |
IC SRAM 72KBIT PARALLEL 100TQFP |
|
AT29C1024-15JIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 44PLCC |
|
MT28F400B5WP-8 TETMicron Technology |
IC FLASH 4MBIT PARALLEL 48TSOP I |
|
N25Q512A13GSF40GMicron Technology |
IC FLASH 512MBIT SPI 108MHZ 16SO |
|
7019L20PF8Renesas Electronics America |
IC SRAM 1.125MBIT PAR 100TQFP |
|
W25Q128FVCJQWinbond Electronics Corporation |
IC FLSH 128MBIT SPI/QUAD 24TFBGA |
|
IS61NLP51236-200B3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
NM27C128Q200Sanyo Semiconductor/ON Semiconductor |
IC EPROM 128KBIT PARALLEL 28CDIP |
|
S29AS016J70BFV040Cypress Semiconductor |
IC FLASH 16MBIT PARALLEL 48FBGA |
|
AT24C02C-MAPD-TRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8UDFN |