English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR2 |
| 内存大小: | 512Mb (32M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 333 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 450 ps |
| 电压 - 电源: | 1.7V ~ 1.9V |
| 工作温度: | 0°C ~ 85°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 84-TFBGA |
| 供应商设备包: | 84-FBGA (12x12.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT29F8G16ADADAH4:DMicron Technology |
IC FLASH 8GBIT PARALLEL 63VFBGA |
|
AT45DB1282-TIRoving Networks / Microchip Technology |
IC FLSH 128MBIT SPI 40MHZ 40TSOP |
|
IS46DR81280C-25DBLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 60TWBGA |
|
AT45DB321E-CCUF-TAdesto Technologies |
IC FLASH 32MBIT SPI 85MHZ 9UBGA |
|
AT25020AN-10SU-2.7Roving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 20MHZ 8SOIC |
|
IDT71V3556S133BGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
70261L35PF8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
CY62127DV30L-55ZSXETCypress Semiconductor |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
IS39LV512-70JCEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 512KBIT PARALLEL 32PLCC |
|
AT24C01-10PI-2.7Roving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8DIP |
|
93C76A-E/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ 8SOIC |
|
IS63LV1024-10KIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
7025L35J8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 84PLCC |
